MIchael Deal's Publications

 

1. M.D. Deal and D.A. Stevenson, "Ternary Phase Equilibria Considerations in Solubility and Diffusivity Studies of Cr in GaAs," Proc. of Electrochem. Soc. Symp. on High Temp. Materials Chemistry, 83-7, 70 (1983).

 

2. M.D. Deal and D.A. Stevenson, "Solubility of Chromium in Gallium Arsenide," J. Electrochem. Soc., 131, 2343 (1984).

 

3. M.D. Deal, R.A. Gasser, and D.A. Stevenson, "Ternary Phase Equilibria in the Ga-As-Cr System and its Relevance to Diffusion and Solubility Studies," J. Phys. Chem. Solids, 46, 859 (1985).

 

4.  D. Pramanik, M. Deal, A. Saxena, and O. Wu, "Formation of Titanium Silicide by Rapid Thermal Annealing," Semiconductor International, p. 94, May, 1985.

 

5. M.D. Deal, D. Pramanik, A.N. Saxena, and K.C. Saraswat, "Tungsten Silicide/n+ Polysilicon Technology for VLSI," Proc. IEEE VLSI Multilevel Interconnection Conf., 2, 324 (1985). (Invited paper).

 

6.  D. Pramanik, M.D. Deal, A.N. Saxena, and O.K. Wu, "Rapid Thermal Annealing of Ion Implanted Ti Films on Si," SPIE, Adv. Appl. of Ion Implantation, 530, 159 (1985).

 

7.  M.D. Deal and D.A. Stevenson, "Diffusion of Chromium in Gallium Arsenide," J. Appl. Phys., 59, 2398 (1986).

 

8. R. Anholt, T.W. Sigmon, and M.D. Deal, "Process and Device Models for GaAs MESFET Technology," Proc. of 1987 IEEE GaAs I.C. Symposium , 9, 53 (1987).

 

9. M.D. Deal, S.E. Hansen, R. Anholt, S. Chou, J.D. Plummer, R.W. Dutton, T.W. Sigmon, D.A. Stevenson, C.R. Helms, and J.C. Bravman, "SUPREM 3.5, Process Modeling of Gallium Arsenide," (Invited Talk) Proc. IEEE IEDM, 87, 256 (1987).

 

10.  R.Anholt, P. Balasingam, S.Chou, T.W. Sigmon, and M.D. Deal, "Ion Implantation in GaAs," J. Appl. Phys., 64, 3429 (1988).

 

11. M.D. Deal, H.G. Robinson, and S.E. Hansen, "Modeling of P-Type Dopants in GaAs using SUPREM 3.5," Proc. of 1988 IEEE GaAs I.C. Symp., 10, 247 (1988).

 

12. M.D. Deal, S.E. Hansen, and T.W. Sigmon, "SUPREM 3.5 - Process Modeling of GaAs Integrated Circuit Technology," IEEE Trans. CAD, 9, 939 (1989).

 

13. L.S. Vanasupa, M.D. Deal, and J.D. Plummer, "Effects of Stress on the Electrical Activation of Implanted Si in GaAs," Appl. Phys. Lett., 55, 274 (1989).

 

14. M.D. Deal and H.G. Robinson, "Diffusion of Implanted Be in GaAs as a Function of Temperature and Dose," Appl. Phys. Lett., 55, 996 (1989).

 

15. M.D. Deal and H.G. Robinson, "Diffusion of Implanted Beryllium in P and N Type Gallium Arsenide," Appl. Phys. Lett., 55, 1990 (1989).

 

16. J.J. Murray, M.D. Deal, and D.A. Stevenson, "Influence of Background Doping and Implant Damage on the Diffusion of Implanted Silicon in GaAs," Appl. Phys. Lett., 56, 472 (1990).

 

17. H.G. Robinson, M.D. Deal, and D.A. Stevenson, "Damage-Induced Diffusion of Implanted Mg and Be in GaAs," Appl. Phys. Lett., 56, 554 (1990).

 

18. E.L. Allen, M.D. Deal, and J.D. Plummer, "The Effect of Background Doping and Dose on Diffusion of Ion-Implanted Tin in Gallium Arsenide," J. Appl. Phys, 67, 3311 (1990).

 

19. M.D. Deal and H.G. Robinson, "Modeling Co-Implanted Si and Be in GaAs," Solid State Electronics, 33, 665 (1990).

 

20. H.G. Robinson, M.D. Deal, and D.A. Stevenson, "Diffusion of Ion Implanted Mg and Be in GaAs," Proceedings of MRS meeting, Fall, 1989 (1990).

 

21. E.L. Allen, M.D. Deal, and J.D. Plummer, "Diffusion of Ion Implanted Tin in Gallium Arsenide," Proceedings of MRS meeting, Fall, 1989 (1990).

 

22. J.J. Murray, M.D. Deal, and D.A. Stevenson, "The Role of Charged Point Defects on the Diffusion Behavior of Silicon in GaAs," Proceedings of MRS meeting, Fall, 1989  (1990).

 

23. Y. Liu, R.W. Dutton, and M.D. Deal, “Side-gating Effect of GaAs MESFETs and Leakage Current in a Semi-Insulating GaAs Substrate,” Electron Dev. Lett., 11, 505 (1990).

 

24. L.S. Vanasupa, M.D. Deal, and J.D. Plummer, “A Model for Si Activation in GaAs,” Proc. of Symposium on State-of-the-Art Processing of Compound Semiconductors, Electro. Chem. Soc. Meeting, Spring, 1990.

 

25. K.H. Lee, D.A. Stevenson, and M.D. Deal, "Diffusion Kinetics of Si in GaAs and Related Defect Chemistry," J. Appl. Phys., 68, 4008 (1990).

 

26. L.S. Vanasupa, M.D. Deal, and J.D. Plummer, “Modeling Activation of Implanted Si in GaAs,”  J. Electrochem. Soc., 138, 2134 (1991).

 

27. L.S. Vanasupa, M.D. Deal, and J.D. Plummer, “On H Passivation of Si Donors in GaAs Annealed with PECVD Silicon Nitride Caps,” J. Electrochem. Soc., 138, 870 (1991).

 

28. E.L. Allen, J.J. Murray, M.D. Deal, J.D. Plummer, K.S. Jones, and W.S. Rubert, “Diffusion of Ion-Implanted Group IV Dopants in GaAs,” Proc. of Symposium on State-of-the-Art Processing of Compound Semiconductors, Electro. Chem. Soc. Meeting, Fall, 1990.

 

29. J. Murray, M.D. Deal, and D.A. Stevenson, “Diffusion of Grown-in Si in GaAs,” Proc. of Symposium on State-of-the-Art Processing of Compound Semiconductors, Electro. Chem. Soc. Meeting, Fall, 1990.

 

30. C.J. Pass, M.D. Deal, and K.C. Saraswat, “Optimization of W-WNx Schottky Contacts in SAGFET Structures in GaAs,” Proc. of Symposium on State-of-the-Art Processing of Compound Semiconductors, Electro. Chem. Soc. Meeting, Fall, 1990.

 

31. H.G. Robinson, M.D. Deal, and D.A. Stevenson, “Hole Dependent Diffusion of Implanted Mg in GaAs,”  Appl. Phys. Lett. 58, 2800 (1991).

 

32.  E.L. Allen, J.J. Murray, M.D. Deal, J.D. Plummer, K.S. Jones, and W.S. Rubert, “Diffusion of Ion-Implanted Group IV Dopants in GaAs,” J. Electro. Chem. Soc., 138, 3440 (1991).

 

33. E.L. Allen, C.J. Pass, M.D. Deal, J.D. Plummer and V.F.K. Chia, "Suppression of Al-Ga interdiffusion by a WNx film on an AlGaAs/AlAs superlattice structure," Appl. Phys. Lett.,  59(25), 3252 (1991).

 

34. J. Murray, M.D. Deal, E.A. Allen, D.A. Stevenson, and S. Nozaki, “Modeling Silicon Diffusion in GaAs using Well Defined Silicon Doped Molecular Beam Epitaxy Structures,” J. Electrochem. Soc., 139, 2037 (1992).

 

35. K.S. Jones, E.L. Allen, H.G. Robinson, D.A. Stevenson, M.D. Deal, and J.D. Plummer, “Extended Defects in Ion Implanted GaAs,” J. Appl. Phys, 70, 6790 (1992).

 

36. H.G. Robinson, M.D. Deal, P.B. Griffin, G. Amaratunga, D.A. Stevenson, and J.D. Plummer, “Modeling Uphill Diffusion of Mg Implants in GaAs Using SUPREM-IV,” J. Appl. Phys., 71, 2615, (1992).

 

37. H.G. Robinson, M.D. Deal, D.A. Stevenson, and K.S Jones "Correleation of Dislocation Loop Formation and Time Dependent Diffusion of Implanted P-Type Dopants in GaAs," Proceedings of MRS meeting, Fall, 1991 (1992).

 

38. E.L. Allen, C.J. Pass, M.D. Deal, J.D. Plummer, and V.K.F. Chia, "The Superlattice Disordering Probe: A Tool for Modeling Diffusion in III-V Superlattices," Proceedings of MRS meeting, Fall, 1991 (1992).

 

39. K.S. Jones, M. Bollong, T.E. Haynes, M.D. Deal, E.L. Allen, and H.G. Robinson, "Ion Implantation Related Defects in GaAs," Proceedings of MRS meeting, Fall, 1991 (1992).

 

40. Y. Liu, R.W. Dutton, and M.D. Deal, “Schottky Contact Effects in the Sidegating Effect of GaAs Devices” Electron Dev. Lett., 13, 149 (1992).

 

41. M.D. Deal, C.J. Hu, C.C. Lee, and H.G. Robinson, "Modeling of Dopant Diffusion in Gallium Arsenide," (Invited Talk) Proc. of MRS meeting, Spring 1993, (1993), p. 365.

 

42. H.G. Robinson, K.S. Jones, C.J. Hu, and M.D. Deal, "Time Dependent Diffusion of P-Type Dopants in Gallium Arsenide," Proc. of MRS meeting, Spring 1993, (1993), p. 397.

 

43. K.S. Jones, H.G. Robinson, T.E. Haynes, M.D. Deal, and E.L. Allen, "Defects and Diffusion in Si Implanted GaAs," Proc. of MRS meeting, Spring 1993, (1993). p. 323.

 

44. C. C. Lee, M. D. Deal, and J. C. Bravman, “Effect of energy on the diffusion of Si implanted into GaAs,”  to appear in SOTOPOCS XVIII, edited by R.Enstrom, S.N.G.Chu, T.Kamijoh, and O.Ueda (Electrochemical Society Meeting, Honolulu, HI, 1993).

 

45. C. J. Hu, M. D. Deal, H. G. Robinson and J. D. Plummer, “Modeling the diffusion behavior of implanted beryllium in gallium arsenide using SUPREM IV,” to appear in SOTOPOCS XVIII, edited by R.Enstrom, S.N.G.Chu, T.Kamijoh, andO.Ueda (Electrochemical Society Meeting, Honolulu, HI, 1993).

 

46. C.C. Lee, M. D. Deal, K. S. Jones, H. G. Robinson and J. C. Bravman, “Effect of energy on the diffusion of Si implanted into GaAs,”  J. of Electrochemical Soc., vol. 141, p. 2245 (1994).

 

47. C. C. Lee, M. D. Deal, and J. C. Bravman, “Eliminating dopant diffusion after ion implantation by surface etching,”  Appl. Phys. Lett., vol. 64, p. 3302 (1994).

 

48. H.G. Robinson, T.E. Haynes, E.L. Allen, C.C. Lee, M.D. Deal, and K.S. Jones, “Effect of Implant Temperature on Dopant Diffusion and Defect Morphology for Si Implanted GaAs,  J. Appl. Phys.  vol. 76, p. 4571 (1994).

 

49. C. C. Lee, M. D. Deal, and J. C. Bravman, “Diffusion of Implanted Be in AlGaAs as a Function of Al Concentration and Temperature,” Appl. Phys. Lett., vol. 66, p. 355 (1995).

 

50. H.G. Robinson, C.C. Lee, M.D. Deal, T.E. Haynes, E.L. Allen, and K.S. Jones, “Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature,” Proc. of  MRS, 1994.

 

51. C. J. Hu, M. D. Deal,  and J. D. Plummer, “Modeling the diffusion of grown-in Be in molecular beam epitaxy GaAs,” J. Appl. Phys., vol. 78, p. 1595 (1995).

 

52. C. J. Hu, M. D. Deal,  and J. D. Plummer, “Modeling the diffusion of implanted Be in GaAs,”  J. Appl. Phys., vol. 78, p. 1606 (1995).

 

53. Y. Liu, Z. Yu, R.W. Dutton, and M.D. Deal, “Accurate Modeling of GaAs MESFET Sidegating Effects by Trapping Simulation,” Proc. of I.E.D.M. , 1994.

 

54. C.C. Lee, M.D. Deal, and J.C. Bravman, “Diffusion of Implanted Be in AlGaAs as a Function of Al Concentration,” Proc. of SOTAPOCS, Fall, 1994.

 

55. Y.M. Haddara, M.D. Deal, H.G. Robinson, and J.C. Bravman, “A New Model For The Anomalous Diffusion Of Grown-In Magnesium In GaAs,”  Proc. of SOTAPOCS,  Fall, 1994.

 

56. Y.M. Haddara, C.C. Lee, C.J. Hu,  M.D. Deal, and J.C. Bravman, “Modeling diffusion in gallium arsenide: recent work,”  Materials Research Society Bulletin, vol. 20, no. 4, p. 41 (1995).

 

57. Y.M. Haddara, M.D. Deal, and J.C. Bravman, “Modeling the transient diffusion behavior of Be in GaAs and the effect of encapsulant material on non-equilibrium point defect populations,” Proc. of  Fourth Int’l. Symposium on Process Physics and Modeling, p. 142, Electrochem. Soc, Pennington, NJ, 1996.

 

58. Michael P. Chase, Michael D. Deal, and James D. Plummer,"Diffusion modeling of zinc implanted into GaAs",Journal of Applied Physics, published Feb. 14, 1997.

 

59. C.Y. Tai, M.D. Deal, and J.D. Plummer, “ Modeling of Al/Ga Interdiffusion in AlAs/GaAs Superlattice Materials,” published in SOTAPOCS proceedings, Electrochemical Society,1997.

 

60. M. Chase, M.D. Deal, and J.D. Plummer,  "Diffusion of Implanted Zinc in GaAs and AlGaAs Modeled with the Kick-Out Mechanism"  published in SOTAPOCS proceedings, Electrochemical Society, 1997.

 

61. L. Bassman, B. Shieh, D. Kim, R. Vinci, J. McVitttie, K.S. Saraswat, and M.D. Deal, “Simulation of the Effect of Dielectric Air Gaps on Interconnect Reliability,” presented at Spring, 1997 Materials Research Society meeting, Symposium on Reliability, published in MRS proceedings.

 

62. L. Bassman, N. Ibrahim, K.S. Saraswat, P. Pinsky, and M.D. Deal, “Mesoscale Modeling of Diffusion in Polycrystalline Structures,” published in SISPAD-97.

 

63. A.R. Massengale, T. Ueda,J.S. Harris,Jr., C.Y. Tai, M.D. Deal, J.D. Plummer, and R. Fernandez, “Localized Impurity Induced Layer Disordering for Lithographic Control of the Lateral Oxidation of AlAs,” Electronics Letters, May 31, 1997.

 

64. A.R. Massengale, C.Y. Tai, M.D. Deal, J.D. Plummer,  and J.S. Harris,Jr.,  “Localized Intermixing of AlAl and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs,” proc. of 24th International Symposium on Compound Semiconductors, San Diego,  Sept., 1997.

 

65. L.C. Bassman, D.-K. Kim, R.P. Vinci, B.P. Shieh, J.P. McVittie, K.C. Saraswat and M.D. Deal, “Simulation of the Effect of Dielectric Air Gaps on Interconnect Reliability,”  1997 NCCAVS Thin Film User's Group Annual Symposium, November 4, 1997, Clarion Hotel, Millbrae, CA.

 

66. K. Lee, M.Deal, J. McVittie, J. Plummer, and K. Saraswat, “Effects of PECVD deposition fluxes on the spatial variation of thin film density of as-deposited SiO2 films in interconnect structures,” presented and published at International Interconnect Technology Conference, May, 1998.

 

67. B.P. Shieh, L.C. Bassman, D.K. Kim, K.C. Saraswat, M.D. Deal, J.P. McVittie, R.S. List, S. Nag, and L. Ting, “Integration and reliability issues for low capacitance air-gap interconnect structures,” presented and published at International Interconnect Technology Conference, May, 1998.

 

68. B.P. Shieh, J.P. McVittie, M.D. Deal, K.C. Saraswat, and S. Nag, “Flux characterization and topography simulation of HDP-CVD of silicon dioxide,” Proc. Of AVS Conf. On Advanced Marterials and Processes for Microelectronics, March, 1999.

 

69. P. Kapur, J.P. McVittie, M.D. Deal, K.C. Saraswat, R. Bubber, Gshang, and S. Gopinath, “Surface morphology of metallo-organic chemical vapor deposition copper films for seed layer in integrated circuit interconnects,” Proc. Of AVS Conf. On Advanced Marterials and Processes for Microelectronics, March, 1999.

 

70. B. Shieh, K. Saraswat, M. Deal, and J. McVittie, “Air gaps lower K of interconnect dielectrics,” Solid State Technology, February 1999, p. 51.

 

71. Lori Bassman , Stanford Univ, Dept of Mechanical Engineering, Stanford, CA; Krishna Garikipati, Michael Deal,, “A new lattice-based continuum formulation for the coupled thermodynamic and mechanical equilibirum of polycrystalline solids,” Proc. of the Spring MRS meeting, San Francisco, April 5-9 1999.

 

72. L. Bassman, K. Garikipati and M. Deal, “Computational Modeling with a New Latttice-Based Continuum Formulation for the Coupled Thermodynamic and Mechanical Equilibrium of Polycrystalline Solids,” Proc. of  MSM 99 (International Conference on Modeling and  Simulation of Microsystems) San Juan, April 19-21 1999.

 

73. Deok-kee Kim, William D. Nix, Eduard Arzt, Michael D. Deal, and James D. Plummer, "Diffusional hillock formation in Al thin films controlled by creep", Materials Research Society, Nov, 1999, Boston, Massachusetts.

 

74. K. Garikipati, L. Bassman and M. Deal,"A Lattice-based Continuum Formulation for the Coupled Thermodynamic and Mechanical Equilibrium of Polycrystalline Solids", Materials Research Society Spring 1999 Meeting, San Francisco, April 5--9, 1999.

 

75. K. Garikipati, L. Bassman and M. Deal, "A Lattice-based Field Formulation for Coupled Mechanics and Diffusion in Crystalline Solids" , K. Garikipati, L. Bassman and M. Deal, Materials Research Society Spring 2000 Meeting, San Francisco, April 24--28, 2000.

 

76. Deok-kee Kim, Birgit Heiland, William D. Nix, Eduard Arzt, Michael D. Deal, and James D. Plummer, "Microstructure of Thermal Hillocks on Blanket Al Thin Films," Thin Solid Films, vol. 371, p. 278, 2000.

 

77. Deok-kee Kim, William D. Nix, Michael D. Deal, and James D. Plummer, "Creep-controlled diffusional hillock formation in blanket aluminum thin films as a mechanism of stress relaxation," Journal of Materials Research, vol 15, p. 1709, 2000.

 

78.  J. Tringe, M.D. Deal, and J.D. Plummer,  "A Diffraction-based Transmission Electron Microscope Technique for Measuring Average Grain Size" Electrochemical and Solid-State Letters, vol. 3, p. 520, 2000.

 

79. K. Garikipati, L. Bassman and M. Deal, "A Lattice-based Micromechanical Continuum Formulation for Coupled Composition-Mechanics in Polycrystalline Solids", Journal of the Mechanics and Physics of Solids, vol. 49, p. 1209, 2001.

 

80. J. Tringe, M.D. Deal, and J.D. Plummer, "Hydrogen Passivation in Plasma-Etched Polycrystalline Silicon Resistors", Electrochemical and Solid-State Letters, vol. 3, p. 517, 2000.

 

81.  Deok-kee Kim, William D. Nix, Richard P. Vinci, Michael D. Deal, and James D. Plummer, "A study of the effect of grain boundary migration on hillock formation in Al thin films," J. Applied Physics, vol 90, p. 781, 2001.

 

82. J.D. Plummer, M.D. Deal, and P.B. Griffin, Silicon VLSI Technology – Fundamentals, Practice, and Modeling, Prentice Hall, Upper Saddle River, New Jersey, 2000, 817 pages.

 

83. J. Tringe, M.D. Deal, and J.D. Plummer, "Transparent probe test structure for electrical and physical characterization of defects in thin films", J. Electrochemical Society, vol. 147, p. 4633, 2000.

 

84. Y. Liu, M.D. Deal, K.C. Saraswat, and J.D. Plummer, "Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si," Applied Physics Letters, vol. 81, p. 4634, 2002.

 

85. M.Y. Liao, J.P. McVittie, M.D. Deal, K.C. Saraswat, and B. Schuler, "Mass transfer for cross-contamination with ZrO2 plasma etching,"  Proceedings of ICMI, 2003.

 

86. Y. Liu, M.D. Deal, M. Sultana, and J.D. Plummer, “Stress effects on noncrystal formation by nickel-induced crystallization of amorphous silicon,”  Spring, 2003 Materials Research Society Meeting, paper number A16.2.

 

87. B.W. Schueler, I. Mowat, P.M. Lindley, M. Deal, J. McVittie, and J. Liao, “Surface metal characterization by time-of-flight SIMS,” ICPSS 2002 Symposium, Belgium.

 

88. S Hung, J. Hoyt, J. Gibbons, C. Lu, M. Deal, and Y. Nishi, “Workfunction Adjustment and Depletion Supression with Multilayer Metalic Gate, SISC, Fall, 2003.

 

89. Y. Liu, M.D. Deal, and J.D. Plummer, “High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates, Appl. Phys. Lett, vol. 84, p. 2563, 2004.

 

90. Y. Liu, M.D. Deal, and J. D. Plummer, “CMOS compatible liquid-phase epitaxial growth of Ge on Si substrates,” Materals Research Society, Spring, 2004, Abstract B4.1.

 

91. C. Olsen, P. Kraus, K Ahmed, S. Kher, S. Hung, N. Krishna, X. Chen, L. Date, M. Burey, J. Campbell, C. Lu, M. Deal, and Y. Nishi, “Tunable workfunction with TaN metal gate on HfO2-HfxSiyO dielectrics,” Materals Research Society, Spring, 2004, Abstract D4.3.

 

92. Y. Liu, K. Gopalakrishnan, P. B. Griffin, K. Ma, M.D. Deal, and J.D. Plummer, “MOSFETs and high-speed photodetectors on GeOI substrates fabricated using melt growth,” Proc. of 2004 International Electronic Device Meeting (IEDM).

 

93. H. Jagannathan, J. Woodruff, H. Adhikari, D. Taylor, H. Kim, M. Deal, C. Chidsey, P. McIntyre and Y. Nishi, "Low temperature synthesis and control of germanium nanowires on silicon substrates for next generation CMOS devices," SOIM-COE04, Sendai, Japan, October 2004.

 

94. Y. Liu M.D. Deal, and J.D. Plummer, “Rapid melt growth of germanium crystal with self-aligned microcrucibles on Si substrates,” J. Electro. Chem. Soc., vol. 152, p. G688, 2005.

 

95. Y. Lui, M.D. Deal, and J.D. Plummer, “Growth-induced barrier lowering for nucleation in phase transition,” submitted for publication in Physical Review Letters.

 

96. C. Lu, G. Wong, M. Deal, Y. Nishi, B. Clemens, P. McIntyre, S. Hung, S. Park, P. Majhi, W. Tsai, “Bilayer metal structures for tunable workfunction gate electrodes,” 2005 Spring Materials Research Society Meeting, G6.3.

 

97. S. Hung, K. Ahmed. C. Olsen, R. Wong, F. Wu, N. Krishna, G. Miner, C. Lu, M. Deal, and Y. Nishi, “Improved workfunction tunability and EOT control with clustered ALD TaN/PVD Ta for multilayer metal gate,” 2005 Spring Materials Research Society Meeting, G10.4.

 

98. G. Wong, C. Lu,  M. Deal, Y. Nishi, and B. Clemens, “Work function of layered refractory metal electrodes in metal oxide semiconductor structures,” 2005 Spring Materials Research Society Meeting, G10.15.

 

99. C. Lu, G. Wong, M. Deal, W. Tsai, P. Majhi, C. Chui, M. Visokay, J. Chambers, L. Colombo, B. Clemens, and Y. Nishi, “Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2,”  IEEE Electron Device Letters, vol. 26, p. 445, July, 2005.

 

100. H. Jagannathan, H. Kim, M. Deal, P. McIntyre, and Y. Nishi, “Analysis of structure and orientation of vertical germanium single crystal nanowires on silicon substrates,” 2005 International Conference on Solid State Devices and Materials, Kobe, Japan.

 

101. Hemanth Jagannathan, Jacob Woodruff, Michael Deal, Paul McIntyre, Christopher Chidsey & Yoshio Nishi, "Controlled Hetero-Epitaxial Synthesisof Germanium Nanowires on Silicon Substrates," 2005 Symposium on Nanoscale Materials, Processes and Devices, December 2005.

 

102. Hemanth Jagannathan, Hyoungsub Kim, Michael Deal, H.-S. Philip Wong, Paul McIntyre, Christopher Chidsey & Yoshio Nishi, "Low Temperature Heteroepitaxial Synthesis and Control of Germanium Nanowires on Silicon Substrates," First Internatioanl Nanotechnology Conference on Communication and Cooperation, June 2005.

 

103. Hemanth Jagannathan, Ho-Cheol Kim, Erik M. Freer, Linnea Sundstrom, Teya Topuria, Philip M. Rice, Michael Deal, and Yoshio Nishi, “Low Temperature Template Synthesis of Germanium Nanowires for 3-D Integration,” presented at 2006 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI.

 

104. C. Lu, G. Wong, M. Deal, B. Clemens, and Y. Nishi, “Thermal stability and device characteristics of MOSFETs utilizing bilayer gates for threshold voltage control,” 2006 Spring Materials Research Society Meeting, E8.3.

 

105. G. Wong, C. Lu,  M. Deal, Y. Nishi, and B. Clemens, “Diffusion modeling and the effect of alloy composition on work function of metal gate electrodes,” 2006 Spring Materials Research Society Meeting, E8.5.

 

106. Hemanth Jagannathan, Jungyup Kim, Michael Deal, Michael Kelly, Yoshio Nishi, "Halide Passivation of Germanium nanowires," submitted to ECS 2006 for SiGe: Materials Processing and Devices.

 

107. Hemanth Jagannathan, Jacob Woodruff, Michael Deal, Paul C. McIntyre, Christopher Chidsey, Yoshio Nishi, "Nature of Germanium Nanowire Heteroepitaxy on Silicon Substrates," J. Applied Physics, vol 100, p. , 2006.

 

108. Hemanth Jagannathan, Ho-Cheol Kim, Erik M. Freer, Linnea Sundstrom,Teya Topuria, Philip M. Rice, Michael Deal, Yoshio Nishi, "Templated Germanium Nanowire Synthesis using Oriented Mesoporous Organosilicate Thin Films,"J. Vac. Sci. Technol. B., vol. 24, p. 2220, 2006.

 

109. C-H. Lu, G. Wong, R. Birringer, M. Deal, B. Clemens, and Y. Nishi, "Work Function Tuning and Device Characteristics of Bilayer Metal Gate Stacks," IEEE 3rd International Symposium on Advanced Gate Stack (ISAGST), Austin, TX, USA, Sep. 27-29, 2006.

 

110. G. M. T. Wong, C-H. Lu, M. Deal, Y. Nishi, and B. M. Clemens, " Work Function Behavior of Nb-W and Ti-W Bilayer Metal Gates via Physical Characterization and Diffusion Modeling", IEEE 3rd International Symposium on Advanced Gate Stack (ISAGST), Austin, TX, USA, Sep. 27-29, 2006

 

111. H. Jagannathan, J. Kim, M. Deal, M. Kelly, and Y. Nishi, “Halide passivation of germanium nanowires,” ECS Transactions, v. 3, p. 1175, 2006.

 

112. C-H. Lu, G. Wong, M. Deal, B. Clemens, and Y. Nishi, "Process Integration and Electrical Properties of Bilayer Metal Gate/High-k MOSFETs," IEEE 65th Device Research Conference, USA, 2007.

 

113. G. M. T. Wong, C.-H. Lu, M. D. Deal, Y. Nishi and B. M. Clemens, "Physical and Electrical Characterization of Nb-W, Ti-W and Pt-Ti Bilayer and Alloy Metal Gate Electrodes for Advanced CMOS Applications", TMS Electronic Materials Conference (EMC), June 20-22, 2007, Notre Dame, Indiana.

 

114. M. Grubbs, X. Zhang, M. Deal, Y. Nishi, and B. Clemens, “High-Temperature-Stable Amorphous (TaxW1-x)80Si10B10 Gates, poster presentated at  International Symposium for Advanced Gate Stack Technology (ISAGST), Sept. 29-Oct. 1, 2008, Austin, TX.

 

115. X. Zhang, M.Deal, and Y. Nishi, "New Universal Physical Model for the Recoverable Part of NBTI Degradation", 67th Annual Device Research Conference, Oral Presentation, June 22-24, 2009, Penn State University,University Park, PA.

 

116. X. Zhang, M. Deal, M. Grubbs, B. Clemens, and Y. Nishi, "Variability of Metal Grain Orientation and the Effects on Electrical Characteristics of Nanoscale MOSFETs,” MRS spring Meeting, Oral Presentation, April 14, 2009, San Fransisco.

 

117. M. Grubbs, X. Zhang, M. Deal, Y. Nishi, B. Clemens. Chemical and Structural Stability of High-Temperature-Stable Amorphous Ta-W-Si-B Gates on HfO2. MRS spring Meeting, Oral Presentation, April 14, 2009, San Fransisco.

 

118. M. Grubbs, M. Deal, Y. Nishi, and B.M. Clemens, “The effect of oxygen on the work function of tungsten gate electrodes in MOS devices,” Electron Device Letters, vol. 30, p. 925, 2009.

 

119. Ching-Huang Lu, Gloria M.T. Wong, Ryan P. Birringer, Reinhold Dauskardt, Michael Deal, Bruce M. Clemens, and Yoshio Nishi, Bilayer metal gate electrodes with tunable work function: mechanism and proposed model, J. Appl. Phys, vol. 106, p. 63710, 2010.

 

120. M. Grubbs, X. Zhang, M. Deal, Y. Nishi, B. Clemens. Compositional and thermal characterization of amorphous Ta-W-Si-B gates. MRS spring Meeting, Oral Presentation, April 14, 2010, San Fransisco.

 

121. X. Zhang, J. Li, M. Grubbs, M. Deal, B. Magyari-Kope, B. Clemens, Y. Nishi, “Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implications for SRAM reliability, 2009 International Electronic Device Meeting.

 

122. R. Birringer, C. Lu, M. Deal, Y. Nishi, and R. Dauskardt, “Bilayer metal gate electrodes with tunable work function: adhesion and interface characterization,” J. Appl. Physics, vol. 108, p. 53704, 2010.

 

123. Melody E. Grubbs, Xiao Zhang, Michael Deal, Yoshio Nishi, and Bruce M. Clemens, “Development and Characterization of High Temperature Stable Ta-W-Si-C Amorphous Metal Gates,” Applied Physics Letters, vol. 97, 223505, 2010.

 

124. Xiao Zhang, Jerome Mitard, Thomas Hoffman,  J. Li, Michael Deal, Melody Grubbs, Blanka Margari-Kope, Bruce Clemens, and Yoshio Nishi “ Theory and Experiments of the Impact of Work Function Variability on Threshold Voltage Variability in MOS Devices,” IEEE Trans. Electron Devices, vol. 59, 3124, 2012.

 

125. Y. Chung, O. Johnson, M. Deal, Y. Nishi, B. Murmann, and Z. Bao, "Engineering the metal gate electrode for controlling the threshold voltage of organic transistors," Appl. Phys. Lett., vol. 101, p. 063304, Aug. 2012.

 

126. J. Ouyang, R. Wongpiya, M. Grubbs, M. Deal, B. Clemens, and Y. Nishi, “Structural and Electrical Characterization of Amorphous Ta-W-Si-C Metal Films for CMOS Applicaitions,” presented at Fall, 2012 Materials Research Society Meeting, Nov. 2012.

 

127. J. Ouyang, R. Wongpiya, M. Deal, B. Clemens, and Y. Nishi, “Structural and Electrical Characterization of Amorphous Ta-Ni Binary Metal Gate Films for CMOS Applications,” presented at Spring, 2013 Materials Research Society Meeting, San Francisco, April, 2013.

 

128. R. Wongpiya, J. Ouyang,  T. Kim, M. Deal, Y. Nishi. and Bruce Clemens, “Amorphous TaWSiC as a Diffusion Barrier for Copper Interconnects,” presented at Spring, 2013 Materials Research Society Meeting, San Francisco, April, 2013.

 

129. R. Wongpiya, J. Ouyang,  T. Kim, M. Deal, Y. Nishi. and Bruce Clemens, “Amorphous Thin Film TaWSiC as a Diffusion Barrier for Interconnects,” Appl. Phys. Lett, vol.103, 022104 (2013).

 

130. J. Ouyang, R. Wongpiya, M. Grubbs, M. Deal, B. Clemens, and Y. Nishi, “Effect of Compostion on Structural and Electrical Properties of Amorphous Ta-W-Si-C Metal Thin Films as a Gate Material,”  ECS Solid State Letters, vol. 2(10), 86 (2013).

 

131. R. Wongpiya, J. Ouyang,  M. Deal, Y. Nishi. and Bruce Clemens, “TiN-Based Amorphous Metal Gates,” presented at Spring, 2014 Materials Research Society Meeting, San Francisco, April, 2014.