2. M.D. Deal and D.A. Stevenson, "Solubility of Chromium in Gallium Arsenide," J. Electrochem. Soc., 131, 2343 (1984).
3. M.D. Deal, R.A. Gasser, and D.A. Stevenson, "Ternary Phase Equilibria in the Ga-As-Cr System and its Relevance to Diffusion and Solubility Studies," J. Phys. Chem. Solids, 46, 859 (1985).
4. D. Pramanik, M. Deal, A. Saxena, and O. Wu, "Formation of Titanium Silicide by Rapid Thermal Annealing," Semiconductor International, p. 94, May, 1985. 5. M.D. Deal, D. Pramanik, A.N. Saxena, and K.C. Saraswat, "Tungsten Silicide/n+ Polysilicon Technology for VLSI," Proc. IEEE VLSI Multilevel Interconnection Conf., 2, 324 (1985). (Invited paper).
6. D. Pramanik, M.D. Deal, A.N. Saxena, and O.K. Wu, "Rapid Thermal Annealing of Ion Implanted Ti Films on Si," SPIE, Adv. Appl. of Ion Implantation, 530, 159 (1985).
7. M.D. Deal and D.A. Stevenson, "Diffusion of Chromium in Gallium Arsenide," J. Appl. Phys., 59, 2398 (1986).
8. R. Anholt, T.W. Sigmon, and M.D. Deal, "Process and Device Models for GaAs MESFET Technology," Proc. of 1987 IEEE GaAs I.C. Symposium , 9, 53 (1987).
9. M.D. Deal, S.E. Hansen, R. Anholt, S. Chou, J.D. Plummer, R.W. Dutton, T.W. Sigmon, D.A. Stevenson, C.R. Helms, and J.C. Bravman, "SUPREM 3.5, Process Modeling of Gallium Arsenide," (Invited Talk) Proc. IEEE IEDM, 87, 256 (1987).
10. R.Anholt, P. Balasingam, S.Chou, T.W. Sigmon, and M.D. Deal, "Ion Implantation in GaAs," J. Appl. Phys., 64, 3429 (1988).
11. M.D. Deal, H.G. Robinson, and S.E. Hansen, "Modeling of P-Type Dopants in GaAs using SUPREM 3.5," Proc. of 1988 IEEE GaAs I.C. Symp., 10, 247 (1988).
12. M.D. Deal, S.E. Hansen, and T.W. Sigmon, "SUPREM 3.5 - Process Modeling of GaAs Integrated Circuit Technology," IEEE Trans. CAD, 9, 939 (1989).
13. L.S. Vanasupa, M.D. Deal, and J.D. Plummer, "Effects of Stress on the Electrical Activation of Implanted Si in GaAs," Appl. Phys. Lett., 55, 274 (1989).
14. M.D. Deal and H.G. Robinson, "Diffusion of Implanted Be in GaAs as a Function of Temperature and Dose," Appl. Phys. Lett., 55, 996 (1989).
15. M.D. Deal and H.G. Robinson, "Diffusion of Implanted Beryllium in P and N Type Gallium Arsenide," Appl. Phys. Lett., 55, 1990 (1989).
16. J.J. Murray, M.D. Deal, and D.A. Stevenson, "Influence of Background Doping and Implant Damage on the Diffusion of Implanted Silicon in GaAs," Appl. Phys. Lett., 56, 472 (1990).
17. H.G. Robinson, M.D. Deal, and D.A. Stevenson, "Damage-Induced Diffusion of Implanted Mg and Be in GaAs," Appl. Phys. Lett., 56, 554 (1990).
18. E.L. Allen, M.D. Deal, and J.D. Plummer, "The Effect of Background Doping and Dose on Diffusion of Ion-Implanted Tin in Gallium Arsenide," J. Appl. Phys, 67, 3311 (1990).
19. M.D. Deal and H.G. Robinson, "Modeling Co-Implanted Si and Be in GaAs ," Solid State Electronics, 33, 665 (1990).
20. H.G. Robinson, M.D. Deal, and D.A. Stevenson, "Diffusion of Ion Implanted Mg and Be in GaAs," Proceedings of MRS meeting, Fall, 1989 (1990).
21. E.L. Allen, M.D. Deal, and J.D. Plummer, "Diffusion of Ion Implanted Tin in Gallium Arsenide," Proceedings of MRS meeting, Fall, 1989 (1990).
22. J.J. Murray, M.D. Deal, and D.A. Stevenson, "The Role of Charged Point Defects on the Diffusion Behavior of Silicon in GaAs," Proceedings of MRS meeting, Fall, 1989 (1990).
23. Y. Liu, R.W. Dutton, and M.D. Deal, "Side-gating Effect of GaAs MESFETs and Leakage Current in a Semi-Insulating GaAs Substrate, Electron Dev. Lett., 11, 505 (1990).
24. L.S. Vanasupa, M.D. Deal, and J.D. Plummer, "A Model for Si Activation in GaAs,"Proc. of Symposium on State-of-the-Art Processing of Compound Semiconductors, Electro. Chem. Soc. Meeting, Spring, 1990.
25. K.H. Lee, D.A. Stevenson, and M.D. Deal, "Diffusion Kinetics of Si in GaAs and Related Defect Chemistry," J. Appl. Phys., 68, 4008 (1990).
26. L.S. Vanasupa, M.D. Deal, and J.D. Plummer, "Modeling Activation of Implanted Si in GaAs," J. Electrochem. Soc., 138, 2134 (1991).
27. L.S. Vanasupa, M.D. Deal, and J.D. Plummer, "On H Passivation of Si Donors in GaAs Annealed with PECVD Silicon Nitride Caps,"J. Electrochem. Soc., 138, 870 (1991).
28. E.L. Allen, J.J. Murray, M.D. Deal, J.D. Plummer, K.S. Jones, and W.S. Rubert, "Diffusion of Ion-Implanted Group IV Dopants in GaAs,"Proc. of Symposium on State-of-the-Art Processing of Compound Semiconductors, Electro. Chem. Soc. Meeting, Fall, 1990.
29. J. Murray, M.D. Deal, and D.A. Stevenson, "Diffusion of Grown-in Si in GaAs,"Proc. of Symposium on State-of-the-Art Processing of Compound Semiconductors, Electro. Chem. Soc. Meeting, Fall, 1990.
30. C.J. Pass, M.D. Deal, and K.C. Saraswat, "Optimization of W-WNx Schottky Contacts in SAGFET Structures in GaAs,"Proc. of Symposium on State-of-the-Art Processing of Compound Semiconductors, Electro. Chem. Soc. Meeting, Fall, 1990.
31. H.G. Robinson, M.D. Deal, and D.A. Stevenson, "Hole Dependent Diffusion of Implanted Mg in GaAs," Appl. Phys. Lett. 58, 2800 (1991).
32. E.L. Allen, J.J. Murray, M.D. Deal, J.D. Plummer, K.S. Jones, and W.S. Rubert, "Diffusion of Ion-Implanted Group IV Dopants in GaAs,"J. Electro. Chem. Soc., 138, 3440 (1991).
33. E.L. Allen, C.J. Pass, M.D. Deal, J.D. Plummer and V.F.K. Chia, "Suppression of Al-Ga interdiffusion by a WNx film on an AlGaAs/AlAs superlattice structure," Appl. Phys. Lett., 59(25), 3252 (1991).
34. J. Murray, M.D. Deal, E.A. Allen, D.A. Stevenson, and S. Nozaki, "Modeling Silicon Diffusion in GaAs using Well Defined Silicon Doped Molecular Beam Epitaxy Structures,"J. Electrochem. Soc., 139, 2037 (1992).
35. K.S. Jones, E.L. Allen, H.G. Robinson, D.A. Stevenson, M.D. Deal, and J.D. Plummer, "Extended Defects in Ion Implanted GaAs,"J. Appl. Phys, 70, 6790 (1992).
36. H.G. Robinson, M.D. Deal, P.B. Griffin, G. Amaratunga, D.A. Stevenson, and J.D. Plummer, "Modeling Uphill Diffusion of Mg Implants in GaAs Using SUPREM-IV,"J. Appl. Phys., 71, 2615, (1992).
37. H.G. Robinson, M.D. Deal, D.A. Stevenson, and K.S Jones "Correleation of Dislocation Loop Formation and Time Dependent Diffusion of Implanted P-Type Dopants in GaAs," Proceedings of MRS meeting, Fall, 1991 (1992).
38. E.L. Allen, C.J. Pass, M.D. Deal, J.D. Plummer, and V.K.F. Chia, "The Superlattice Disordering Probe: A Tool for Modeling Diffusion in III-V Superlattices," Proceedings of MRS meeting, Fall, 1991 (1992).
39. K.S. Jones, M. Bollong, T.E. Haynes, M.D. Deal, E.L. Allen, and H.G. Robinson, "Ion Implantation Related Defects in GaAs," Proceedings of MRS meeting, Fall, 1991 (1992).
40. Y. Liu, R.W. Dutton, and M.D. Deal, RSchottky Contact Effects in the Sidegating Effect of GaAs Devices," Electron Dev. Lett., 13, 149 (1992).
41. M.D. Deal, C.J. Hu, C.C. Lee, and H.G. Robinson, "Modeling of Dopant Diffusion in Gallium Arsenide," (Invited Talk) Proc. of MRS meeting, Spring 1993, (1993), p. 365.
42. H.G. Robinson, K.S. Jones, C.J. Hu, and M.D. Deal, "Time Dependent Diffusion of P-Type Dopants in Gallium Arsenide," Proc. of MRS meeting, Spring 1993, (1993), p. 397.
43. K.S. Jones, H.G. Robinson, T.E. Haynes, M.D. Deal, and E.L. Allen, "Defects and Diffusion in Si Implanted GaAs," Proc. of MRS meeting, Spring 1993, (1993). p. 323.
44. C. C. Lee, M. D. Deal, and J. C. Bravman, "Effect of energy on the diffusion of Si implanted into GaAs," to appear in SOTOPOCS XVIII, edited by R.Enstrom, S.N.G.Chu, T.Kamijoh, and O.Ueda (Electrochemical Society Meeting, Honolulu, HI, 1993).
45. C. J. Hu, M. D. Deal, H. G. Robinson and J. D. Plummer, "Modeling the diffusion behavior of implanted beryllium in gallium arsenide using SUPREM IV," SOTOPOCS XVIII, edited by R.Enstrom, S.N.G.Chu, T.Kamijoh, and O.Ueda (Electrochemical Society Meeting, Honolulu, HI, 1993).
46. C.C. Lee, M. D. Deal, K. S. Jones, H. G. Robinson and J. C. Bravman, "Effect of energy on the diffusion of Si implanted into GaAs," J. of Electrochemical Soc., vol. 141, p. 2245 (1994).
47. C. C. Lee, M. D. Deal, and J. C. Bravman, "Eliminating dopant diffusion after ion implantation by surface etching," Appl. Phys. Lett., vol. 64, p. 3302 (1994).
48. H.G. Robinson, T.E. Haynes, E.L. Allen, C.C. Lee, M.D. Deal, and K.S. Jones, "Effect of Implant Temperature on Dopant Diffusion and Defect Morphology for Si Implanted GaAs, J. Appl. Phys. vol. 76, p. 4571 (1994).
49. C. C. Lee, M. D. Deal, and J. C. Bravman, "Diffusion of Implanted Be in AlGaAs as a Function of Al Concentration and Temperature," Appl. Phys. Lett., vol. 66, p. 355 (1995).
50. H.G. Robinson, C.C. Lee, M.D. Deal, T.E. Haynes, E.L. Allen, and K.S. Jones, "Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature," Proc. of MRS, 1994.
51. C. J. Hu, M. D. Deal, and J. D. Plummer, "Modeling the diffusion of grown-in Be in molecular beam epitaxy GaAs," J. Appl. Phys., vol. 78, p. 1595 (1995).
52. C. J. Hu, M. D. Deal, and J. D. Plummer, "Modeling the diffusion of implanted Be in GaAs," J. Appl. Phys., vol. 78, p. 1606 (1995).
53. Y. Liu, Z. Yu, R.W. Dutton, and M.D. Deal, "Accurate Modeling of GaAs MESFET Sidegating Effects by Trapping Simulation," Proc. of I.E.D.M. , 1994.
54. C.C. Lee, M.D. Deal, and J.C. Bravman, "Diffusion of Implanted Be in AlGaAs as a Function of Al Concentration," Proc. of SOTAPOCS, Fall, 1994.
55. Y.M. Haddara, M.D. Deal, H.G. Robinson, and J.C. Bravman, "A New Model For The Anomalous Diffusion Of Grown-In Magnesium In GaAs," Proc. of SOTAPOCS, Fall, 1994.
56. Y.M. Haddara, C.C. Lee, C.J. Hu, M.D. Deal, and J.C. Bravman, "Modeling diffusion in gallium arsenide: recent work," Materials Research Society Bulletin, vol. 20, no. 4, p. 41 (1995).
57. Y.M. Haddara, M.D. Deal, and J.C. Bravman, "Modeling the transient diffusion behavior of Be in GaAs and the effect of encapsulant material on non-equilibrium point defect populations," Proc. of Fourth Int'l. Symposium on Process Physics and Modeling, p. 142, Electrochem. Soc, Pennington, NJ, 1996.
58. Michael P. Chase, Michael D. Deal, and James D. Plummer,"Diffusion modeling of zinc implanted into GaAs," Journal of Applied Physics, To be published Feb. 14, 1997.
59. C.Y. Tai, M.D. Deal, and J.D. Plummer, "Modeling of Al/Ga Interdiffusion in AlAs/GaAs Superlattice Materials," to be published in SOTAPOCS proceedings.
60. M. Chase, M.D. Deal, and J.D. Plummer, "Diffusion of Implanted Zinc in GaAs and AlGaAs Modeled with the Kick-Out Mechanism" to be published in SOTAPOCS proceedings.
61. L. Bassman, B. Shieh, D. Kim, R. Vinci, J. McVitttie, K.S. Saraswat, and M.D. Deal, "Simulation of the Effect of Dielectric Air Gaps on Interconnect Reliability," to be published in MRS proceedings
62. L. Bassman, N. Ibrahim, K.S. Saraswat, P. Pinsky, and M.D. Deal, "Mesoscale Modeling of Diffusion in Polycrystalline Structures," accepted in NUPAD97.
63. A.R. Massengale, T. Ueda,J.S. Harris,Jr., C.Y. Tai, M.D. Deal, J.D. Plummer, and R. Fernandez, "Localized Impurity Induced Layer Disordering for Lithographic Control of the Lateral Oxidation of AlAs," Electronics Letters, May 31, 1997.
64. A.R. Massengale, C.Y. Tai, M.D. Deal, J.D. Plummer, and J.S. Harris,Jr., "Localized Intermixing of AlAl and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs," proc. of 24th International Symposium on Compound Semiconductors, San Diego, Sept., 1997.
65. L.C. Bassman, D.-K. Kim, R.P. Vinci, B.P. Shieh, J.P. McVittie, K.C. Saraswat and M.D. Deal, "Simulation of the Effect of Dielectric Air Gaps on Interconnect Reliability," 1997 NCCAVS Thin Film User's Group Annual Symposium, November 4, 1997, Clarion Hotel, Millbrae, CA
66. K. Lee, M.Deal, J. McVittie, J. Plummer, and K. Saraswat, "Effects of PECVD deposition fluxes on the spatial variation of thin film density of as-deposited SiO2 films in interconnect structures," presented and published at International Interconnect Technology Conference, May, 1998.
67. B.P. Shieh, L.C. Bassman, D.K. Kim, K.C. Saraswat, M.D. Deal, J.P. McVittie, R.S. List, S. Nag, and L. Ting, "Integration and reliability issues for low capacitance air-gap interconnect structures," presented and published at International Interconnect Technology Conference, May, 1998.
68. B.P. Shieh, J.P. McVittie, M.D. Deal, K.C. Saraswat, and S. Nag, "Flux characterization and topography simulation of HDP-CVD of silicon dioxide," Proc. Of AVS Conf. On Advanced Marterials and Processes for Microelectronics, March, 1999.
69. P. Kapur, J.P. McVittie, M.D. Deal, K.C. Saraswat, R. Bubber, Gshang, S. Gopinath, "Surface morphology of metallo-organic chemical vapor deposition copper films for seed layer in integrated circuit interconnects," Proc. Of AVS Conf. On Advanced Marterials and Processes for Microelectronics, March, 1999.
70. B. Shieh, K. Saraswat, M. Deal, and J. McVittie, "Air gaps lower K of interconnect dielectrics," Solid State Technology, February 1999, p. 51.
71. Lori Bassman , Stanford Univ, Dept of Mechanical Engineering, Stanford, CA; Krishna Garikipati, Michael Deal,, "A new lattice-based continuum formulation for the coupled thermodynamic and mechanical equilibirum of polycrystalline solids," Proc. of the Spring MRS meeting, San Francisco, April 5-9 1999.
72. L. Bassman, K. Garikipati and M. Deal, "Computational Modeling with a New Latttice-Based Continuum Formulation for the Coupled Thermodynamic and Mechanical Equilibrium of Polycrystalline Solids," Proc. of MSM 99 (International Conference on Modeling and Simulation of Microsystems) San Juan, April 19-21 1999
73. Deok-kee Kim, William D. Nix, Eduard Arzt, Michael D. Deal, and James D. Plummer, "Diffusional hillock formation in Al thin films controlled by creep", Materials Research Society, Nov, 1999, Boston, Massachusetts.
74. K. Garikipati, L. Bassman and M. Deal,"A Lattice-based Continuum Formulation for the Coupled Thermodynamic and Mechanical Equilibrium of Polycrystalline Solids", Materials Research Society Spring 1999 Meeting, San Francisco, April 5--9, 1999.
75. K. Garikipati, L. Bassman and M. Deal, "A Lattice-based Field Formulation for Coupled Mechanics and Diffusion in Crystalline Solids" , K. Garikipati, L. Bassman and M. Deal, Materials Research Society Spring 2000 Meeting, San Francisco, April 24--28, 2000.
76. Deok-kee Kim, Birgit Heiland, William D. Nix, Eduard Arzt, Michael D. Deal, and James D. Plummer, "Microstructure of Thermal Hillocks on Blanket Al Thin Films," accepted for publication in Thin Solid Films.
77. Deok-kee Kim, William D. Nix, Michael D. Deal, and James D. Plummer, "Creep-controlled diffusional hillock formation in blanket aluminum thin films as a mechanism of stress relaxation," accepted for publication in the Journal of Materials Research.
78. J. Tringe, M.D. Deal, and J.D. Plummer, "A Diffraction-based Transmission Electron Microscope Technique for Measuring Average Grain Size" Electrochemical and Solid-State Letters, vol. 3, p. 520, 2000.
79. K. Garikipati, L. Bassman and M. Deal, "A Lattice-based Micromechanical Continuum Formulation for Coupled Composition-Mechanics in Polycrystalline Solids", accepted for publication in Journal of the Mechanics and Physics of Solids.
80. J. Tringe, M.D. Deal, and J.D. Plummer, "Hydrogen Passivation in Plasma-Etched Polycrystalline Silicon Resistors", Electrochemical and Solid-State Letters, vol. 3, p. 517, 2000.
81. Deok-kee Kim, William D. Nix, Richard P. Vinci, Michael D. Deal, and James D. Plummer, "A study of the effect of grain boundary migration on hillock formation in Al thin films," accepted for publication in J. Applied Physics.
82. J.D. Plummer, M.D. Deal, and P.B. Griffin, Silicon VLSI Technology * Fundamentals, Practice, and Modeling, Prentice Hall, Upper Saddle River, New Jersey, 2000, 817 pages.
83. J. Tringe, M.D. Deal, and J.D. Plummer, "Transparent probe test structure for electrical and physical characterization of defects in thin films", J. Electrochemical Society, vol. 147, p. 4633, 2000.
84. K.M. Lee, M.D. Deal, J. McVittie, J.D. Plummer, and K.Saraswat, "Measurement of spatical etch-rate variation in trench-fill LPCVD, PECVD, and HDPCVD SiO2 films," submitted to JECS.
85. K.M. Lee, M.D. Deal, J. McVittie, J.D. Plummer, and K.Saraswat, "Spatial Variation of film properties in PECVD SiO2 deposited on non-planar surfaces," submitted to JECS.